2n4416 2N4416A n-channel jfet jedec t o-72 case central semiconductor corp. tm r1 (4-april 2007) description : the central semiconductor 2n4416 and 2N4416A are silicon n-channel junction field effect t ransistors designed for vhf amplifier and mixer applications. maximum ra tings: (t a =25?) symbol 2n4416 2N4416A units gate-drain v oltage v gd 30 35 v gate-source v oltage v gs 30 35 v drain-source v oltage v ds 30 35 v gate current i g 10 10 ma power dissipation p d 300 300 mw operating and storage junction t emperature t j ,t stg -65 to +200 ? electrical characteristics: (t a =25? unless otherwise noted) 2n4416 2N4416A symbol test conditions min max min max units i gss v gs =20v , v ds =0v - 0.1 -- 0.1 na i gss v gs =20v , v ds =0v , t a =150? - 0.1 0.1 a i dss v ds =15v , v gs =0v 5.0 15 5.0 15 ma bv gss v ds =0v , i g =1.0a 30 - 35 - v v gs(off) v ds =15v , i d =1.0na - 6.0 2.5 6.0 v g fs v ds =15v , v gs =0v , f=1.0khz 4,500 7,500 4,500 7,500 umho g os v ds =15v , v gs =0v , f=1.0khz - 50 - 50 umho c rss v ds =15v , v gs =0, f=1.0mhz - 1.0 - 1.0 pf c iss v ds =15v , v gs =0, f=1.0mhz - 4.0 - 4.0 pf c oss v ds =15v , v gs =0, f=1.0mhz - 2.0 - 2.0 pf high frequency characteristics: 100 mhz 400 mhz symbol test conditions min max min max units g iss v ds =15v , v gs =0v - 100 - 1,000 umho b iss v ds =15v , v gs =0v , - 2,500 - 10,000 umho g oss v ds =15v , v gs =0v - 75 - 100 umho b oss v ds =15v , v gs =0v - 1,000 - 4,000 umho g fs v ds =15v , v gs =0v - - 4,000 - umho gps v ds =15v , i d =5ma 18 - 10 - db nf v ds =15v , i d =5ma, r g =1k ? - 2.0 - 4.0 db marking code : full part nmber
central semiconductor corp. tm t o-72 case - mechanical outline 2n4416 2N4416A n-channel jfet r1 (4-april 2007) lead code: 1) source 2) drain 3) ga te 4) case marking codes: full part number
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